?2009 fairchild semiconductor corporation isl9r860p2, isl9r860s3st isl9r860p2, isl9r860s3st rev. c2 isl9r860p2, isl9r860s3st 8a, 600v stealth? diode general description the isl9r860p2, isl9r860s2 and isl9r860s3s are stealth? diodes optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rrm ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rrm and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with an smps igbt to provide the most efficient and highest power density design at lower cost. formerly developmental type ta49409. features ? soft recovery . . . . . . . . . . . . . . . . . . . t b / t a > 2.5 ? fast recovery . . . . . . . . . . . . . . . . . . . . t rr < 25ns ? operating temperature . . . . . . . . . . . . . . . 175 o c ? reverse voltage. . . . . . . . . . . . . . . . . . . . . . 600v ? avalanche energy rated applications ? switch mode power supplies ? hard switched pfc boost diode ? ups free wheeling diode ? motor drive fwd ? smps fwd ? snubber diode device maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current (t c = 147 o c) 8 a i frm repetitive peak surge current (20khz square wave) 16 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 100 a p d power dissipation 85 w e avl avalanche energy (1a, 40mh) 20 mj t j , t stg operating and storage temperature range -55 to 175 c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief tb334 300 260 c c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specificatio n is not implied. k a cathode (flange) cathode anode jedec to-220ac cathode (flange) anode n/c jedec to-263ab package symbol october 2009
?2009 fairchild semiconductor corporation isl9r860p2, isl9r860s3st rev. c2 isl9r860p2, isl9r860s3st package marking and ordering information electrical characteristics t c = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package tape width quantity r860p2 isl9r860p2 to-220ac - - r860s3s isl9r860s3st to-263ab 24mm 800 symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 600v t c = 25c - - 100 a t c = 125c - - 1.0 ma v f instantaneous forward voltage i f = 8a t c = 25c - 2.0 2.4 v t c = 125c - 1.6 2.0 v c j junction capacitance v r = 10v, i f = 0a - 30 - pf t rr reverse recovery time i f = 1a, di f /dt = 100a/ s, v r = 30v - 18 25 ns i f = 8a, di f /dt = 100a/ s, v r = 30v - 21 30 ns t rr reverse recovery time i f = 8a, di f /dt = 200a/ s, v r = 390v, t c = 25c -28-ns i rrm maximum reverse recovery current - 3.2 - a q rr reverse recovery charge - 50 - nc t rr reverse recovery time i f = 8a, di f /dt = 200a/ s, v r = 390v, t c = 125c -77-ns s softness factor (t b /t a )-3.7- i rrm maximum reverse recovery current - 3.4 - a q rr reverse recovery charge - 150 - nc t rr reverse recovery time i f = 8a, di f /dt = 600a/ s, v r = 390v, t c = 125c -53-ns s softness factor (t b /t a )-2.5- i rrm maximum reverse recovery current - 6.5 - a q rr reverse recovery charge 195 - nc di m /dt maximum di/dt during t b - 500 - a/s r jc thermal resistance junction to case - - 1.75 c/w r ja thermal resistance junction to ambient to-220 - - 62 c/w r ja thermal resistance junction to ambient to-263 62 c/w
?2009 fairchild semiconductor corporation isl9r860p2, isl9r860s2, isl9r860s3st rev. c2 isl9r860p2, isl9r860s3st typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage figure 3. t a and t b curves vs forward current figure 4. t a and t b curves vs di f /dt figure 5. maximum reverse recovery current vs forward current figure 6. maximum reverse recovery current vs di f /dt v f , forward voltage (v) i f , forward current (a) 0 0.5 0.75 1 2.5 0.25 1.5 2 2.25 0 2 4 6 8 10 12 14 16 2.75 25 o c 175 o c 150 o c 100 o c 125 o c 1.75 1.25 v r , reverse voltage (v) i r , reverse current (a) 100 10 1 100 200 300 500 600 400 0.1 25 o c 175 o c 150 o c 125 o c 100 o c i f , forward current (a) 0 0 10 20 30 40 50 60 10 16 t, recovery times (ns) 70 80 2 4 6 8 12 14 v r = 390v, t j = 125c t b at di f /dt = 200a/s, 500a/s, 800a/s t a at di f /dt = 200a/s, 500a/s, 800a/s di f /dt, current rate of change (a/s) 100 0 10 20 30 40 50 60 700 1000 t, recovery times (ns) 200 300 400 500 600 800 900 70 80 90 v r = 390v, t j = 125c t b at i f = 16a, 8a, 4a t a at i f = 16a, 8a, 4a i f , forward current (a) 0 2 3 4 5 6 7 8 16 i rrm , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 500a/s di f /dt = 200a/s v r = 390v, t j = 125c 9 10 11 2 4 6 8 10 12 14 di f /dt, current rate of change (a/s) 100 0 2 4 6 8 10 700 1000 i rrm , max reverse recovery current (a) v r = 390v, t j = 125c i f = 16a i f = 8a i f = 4a 12 14 200 300 400 500 600 800 900
?2009 fairchild semiconductor corporation isl9r860p2, isl9r860s2, isl9r860s3st rev. c2 isl9r860p2, isl9r860s2, isl9r860s3st figure 7. reverse recovery softness factor vs di f /dt figure 8. reverse recovery charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 10. dc current derating curve figure 11. normalized maximum transient thermal impedance typical performance curves (continued) di f /dt, current rate of change (a/s) 100 1 2 3 4 5 6 700 1000 v r = 390v, t j = 125c i f = 16a i f = 8a i f = 4a s, reverse recovery softness factor 200 300 400 500 600 800 900 di f /dt, current rate of change (a/s) 50 100 150 200 250 300 350 v r = 390v, t j = 125c i f = 16a i f = 8a i f = 4a q rr , reverse recovery charge (nc) 100 700 1000 200 300 400 500 600 800 900 v r , reverse voltage (v) c j , junction capacitance (pf) 0 200 400 600 800 1000 1200 0.1 100 10 1 4 0 150 155 165 140 175 160 6 8 10 t c , case temperature ( o c) i f(av) , average forward current (a) 170 145 2 t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja , normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0
?2009 fairchild semiconductor corporation isl9r860p2, isl9r860s3st rev. c2 isl9r860p2, isl9r860s3st test circuits and waveforms figure 12. t rr test circuit figure 13. t rr waveforms and definitions figure 14. avalanche energy test circuit figure 15. avalanche current and voltage waveforms r g l v dd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e av l = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - q1 i = 1a l = 40mh v dd = 50v iv t 0 t 1 t 2 i l v avl t i l
isl9r860p2, isl9r860s3st mechanical dimensions to-220ac dimensions in millimeters
isl9r860p2, isl9r860s3st mechanical dimensions to-263ab dimensions in millimeters land pattern recommendation detail a, rotated 90 scale: 2x 2 seating plane 3 4 gage plane 1 2 1 4 3 see detail a 10.67 9.65 1.68 1.00 9.65 8.38 1.78 max 1.78 1.14 0.99 0.51 5.08 (2.12) 6.22 min 6.86 min 15.88 14.61 1.65 1.14 4.83 4.06 0.74 0.33 8 0 8 0 2.79 1.78 (5.38) 0.25 max 0.25 0.25 a b m m -a- -b- 0.10 b notes: unless otherwise specified a) all dimensions are in millimeters. b) reference jedec, to-263, variation ab. c) dimensioning and tolerancing per ansi y14.5m - 1994. d) location of the pin hole may vary (lower left corner, lower center and center of the package). e) landpattern recommendation per ipc to254p1524x482-3n f) filename: to263a02rev6 12.70 9.45 3.80 1.05 (6.40) 10.00 unless noted, all dims typical 5.08
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